Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure

doi:10.1039/d1ra08680d

科研成果详情

题名	Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure
作者	Wei, Huiyun 1,3,4; Qiu, Peng 1; Yu, Meina 2; Song, Yimeng 1; Li, Ye 1; He, Yingfeng 1; Peng, Mingzeng 1; Liu, Xiaohu3,4; Zheng, Xinhe 1
发表日期	2022-01-12
发表期刊	RSC ADVANCES 影响因子和分区
语种	英语
原始文献类型	Article
关键词	Chemical stability Electron mobility Electron transitions Electron transport properties Epilayers II-VI semiconductors III-V semiconductors Oxide minerals Selenium compounds Semiconductor quantum dots Semiconductor quantum wells Single crystals Solar cells Solar power generation Temperature Titanium dioxide Wide band gap semiconductors Zinc oxide Carrier transport properties Effective electrons Electron transport layers Electron-transport materials Electron-transport properties Hybrid structure Optoelectronics property Performance Photovoltaic performance Quantum dot solar cells
其他关键词	SENSITIZED SOLAR-CELLS ; ELECTRON-TRANSPORT ; EFFICIENT ; TIO2 ; DYNAMICS ; LAYER ; GAN ; INJECTION ; MOBILITY ; RUTILE
摘要	Electron transport layers (ETLs) play a key role in the electron transport properties and photovoltaic performance of solar cells. Although the existing ETLs such as TiO2, ZnO and SnO2 have been widely used to fabricate high performance solar cells, they still suffer from several inherent drawbacks such as low electron mobility and poor chemical stability. Therefore, exploring other novel and effective electron transport materials is of great importance. Gallium nitride (GaN) as an emerging candidate with excellent optoelectronic properties attracts our attention, in particular its significantly higher electron mobility and similar conduction band position to TiO2. Here, we mainly focus on the investigation of interfacial carrier transport properties of a GaN epilayer/quantum dot hybrid structure. Benefiting from the quantum effects of QDs, suitable energy level arrangements have formed between the GaN and CdSe QDs. It is revealed that the GaN epilayer exhibits better electron extraction ability and faster interfacial electron transfer than the rutile TiO2 single crystal. Moreover, the corresponding electron transfer rates of 4.44 x 10(8) s(-1) and 8.98 x 10(8) s(-1) have been calculated, respectively. This work preliminarily shows the potential application of GaN in quantum dot solar cells (QDSCs). Carefully tailoring the structure and optoelectronic properties of GaN, in particular realizing the low-temperature deposition of high-quality GaN on various substrates, will significantly promote the construction of highly efficient GaN-ETL based QDSCs.
资助项目	National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [52002021]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities [FRF-TP-20-016A2, FRF-IDRY-20-037]; National Key Research and Development Program of China [2018YFA0703700]; Engineering Research Center of Clinical Functional Materials and Diagnosis & Treatment Devices of Zhejiang Province [WIUCASK20005]
出版者	ROYAL SOC CHEMISTRY
出版地	CAMBRIDGE
ISSN	2046-2069
EISSN	2046-2069
卷号	12 期号:4 页码:2276-2281
DOI	10.1039/d1ra08680d
页数	29
WOS类目	Chemistry, Multidisciplinary
WOS研究方向	Chemistry
WOS记录号	WOS:000743167000001
收录类别	SCIE ; EI ; SCOPUS ; PUBMED
EI入藏号	20220611586712
EI主题词	Gallium nitride
EI分类号	482.2 Minerals ; 615.2 Solar Power ; 641.1 Thermodynamics ; 702.3 Solar Cells ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 801 Chemistry ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids
URL	查看原文
PubMed ID	35425246
SCOPUSEID	2-s2.0-85123908306
通讯作者地址	[Zheng, Xinhe]Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing,100083,China ; [Liu, Xiaohu]School of Biomedical Engineering,School of Ophthalmology and Optometry,Wenzhou Medical University,Wenzhou,325027,China
Scopus学科分类	Chemistry (all);Chemical Engineering (all)
引用统计	被引频次[WOS]：0 [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://kms.wmu.edu.cn/handle/3ETUA0LF/8275
专题	眼视光学院（生物医学工程学院）、附属眼视光医院_生物材料系
通讯作者	Liu, Xiaohu; Zheng, Xinhe
作者单位	1.Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing,100083,China; 2.Institute for Advanced Materials and Technology,University of Science and Technology Beijing,Beijing,100083,China; 3.School of Biomedical Engineering,School of Ophthalmology and Optometry,Wenzhou Medical University,Wenzhou,325027,China; 4.Eng. Res. Ctr. of Clin. Funct. Materials and Diagnosis and Treatment Devices of Zhejiang Province,Wenzhou Institute,University of Chinese Academy of Sciences,Wenzhou Institute of Biomaterials and Engineering,Wenzhou,325027,China
推荐引用方式 GB/T 7714	Wei, Huiyun,Qiu, Peng,Yu, Meina,et al. Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure[J]. RSC ADVANCES,2022,12(4):2276-2281.
APA	Wei, Huiyun., Qiu, Peng., Yu, Meina., Song, Yimeng., Li, Ye., ... & Zheng, Xinhe. (2022). Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure. RSC ADVANCES, 12(4), 2276-2281.
MLA	Wei, Huiyun,et al."Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure".RSC ADVANCES 12.4(2022):2276-2281.